Apparatus and method for high density multi-chip structures

ABSTRACT

Devices and methods are described including a multi-chip assembly. Embodiments of multi-chip assemblies are provided that uses both lateral connection structures and through chip connection structures. One advantage of this design includes an increased number of possible connections. Another advantage of this design includes shorter distances for interconnection pathways, which improves device performance and speed.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. application serial No.11/458,859, filed Jul. 20, 2006, which is a divisional of U.S. Ser. No.10/654,038, filed Sep. 3, 2003, which are herein incorporated byreference in its entirety.

TECHNICAL FIELD

This invention relates to semiconductor chips and chip assemblies.Specifically, this invention relates to multi-chip structures andmethods of forming multi-chip structures.

BACKGROUND

An ever present goal in the semiconductor industry has been to decreasethe size of devices, and to increase the performance of devices.However, both of these goals present large technical hurdles as the twogoals are often in conflict with each other.

As the minimum feature size achievable in semiconductor manufacturingdecreases, the capacitive coupling between adjacent metal lines becomesa significant impediment to achieving higher performance. Further, asthe minimum feature size decreases the number of devices potentiallyachievable in a given area increases, as a second power function. Thenumber of wiring connections is increasing at least as rapidly. In orderto accommodate the increased wiring, the chip designer would like toshrink the space between adjacent lines to the minimum achievabledimension. This has the unfortunate effect of increasing the capacitiveload.

One way to accommodate the increased wiring and reduce capacitive loadis to substitute lower dielectric constant materials for the insulatingmaterial. A common insulating material to date is SiO₂, which has adielectric constant of around 4, is now used in most very large scaleintegrated circuit (VLSI) chips. Another way to accommodate theincreased wiring and reduce capacitive load is to shorten the distancebetween devices by more dense packaging.

What is needed is a device design and method that improves theperformance and reduces the size of a multi-chip assembly. Specifically,devices and methods are needed that utilize improved insulatingmaterials. Further, devices and methods are needed that utilize improveddense packaging configurations.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an information handling system according to anembodiment of the invention.

FIG. 2A illustrates a chip in a stage of manufacture according to anembodiment of the invention.

FIG. 2B illustrates a chip in a stage of manufacture according to anembodiment of the invention.

FIG. 2C illustrates a chip in a stage of manufacture according to anembodiment of the invention.

FIG. 2D illustrates a chip in a stage of manufacture according to anembodiment of the invention.

FIG. 2E illustrates a chip in a stage of manufacture according to anembodiment of the invention.

FIG. 2F illustrates a chip in a stage of manufacture according to anembodiment of the invention.

FIG. 2G illustrates a chip and carrier in a stage of manufactureaccording to an embodiment of the invention.

FIG. 2H illustrates a chip and carrier in a stage of manufactureaccording to an embodiment of the invention.

FIG. 2I illustrates a chip in a stage of manufacture according to anembodiment of the invention.

FIG. 2J illustrates a top view of a chip in a stage of manufactureaccording to an embodiment of the invention.

FIG. 3 illustrates a multi-chip assembly according to an embodiment ofthe invention.

FIG. 4 illustrates another multi-chip assembly according to anembodiment of the invention.

DETAILED DESCRIPTION

In the following detailed description of the invention, reference ismade to the accompanying drawings which form a part hereof, and in whichis shown, by way of illustration, specific embodiments in which theinvention may be practiced. In the drawings, like numerals describesubstantially similar components throughout the several views. Theseembodiments are described in sufficient detail to enable those skilledin the art to practice the invention. Other embodiments may be utilizedand structural, logical, and electrical changes may be made withoutdeparting from the scope of the present invention.

The terms wafer and substrate used in the following description includeany structure having an exposed surface with which to form theintegrated circuit (IC) structure of the invention. The term substrateis understood to include semiconductor wafers. The term substrate isalso used to refer to semiconductor structures during processing, andmay include other layers, such as silicon-on-insulator (SOI), etc. thathave been fabricated thereupon. Both wafer and substrate include dopedand undoped semiconductors, epitaxial semiconductor layers supported bya base semiconductor or insulator, as well as other semiconductorstructures well known to one skilled in the art. The term conductor isunderstood to include semiconductors, and the term insulator ordielectric is defined to include any material that is less electricallyconductive than the materials referred to as conductors.

The term “horizontal” as used in this application is defined as a planeparallel to the conventional plane or surface of a wafer or substrate,regardless of the orientation of the wafer or substrate. The term“vertical” refers to a direction perpendicular to the horizontal asdefined above. Prepositions, such as “on”, “side” (as in “sidewall”),“higher”, “lower”, “over” and “under” are defined with respect to theconventional plane or surface being on the top surface of the wafer orsubstrate, regardless of the orientation of the wafer or substrate.

Although the terms “memory chip” and “logic chip” are used in thefollowing description, one of ordinary skill in the art will recognizethat in one embodiment, a chip may include both memory circuitry andlogic circuitry on the same chip. A chip with both memory circuitry andlogic circuitry on the same chip is defined to be both a “memory chip”and a “logic chip” as used in the following description. The followingdetailed description is, therefore, not to be taken in a limiting sense,and the scope of the present invention is defined only by the appendedclaims, along with the full scope of equivalents to which such claimsare entitled.

An example of an information handling system such as a personal computeris included to show an example of a high level device application forthe present invention. FIG. 1 is a block diagram of an informationhandling system 1 incorporating at least one multi-chip assembly 4 inaccordance with one embodiment of the invention. Information handlingsystem 1 is merely one example of an electronic system in which thepresent invention can be used. Other examples, include, but are notlimited to personal data assistants (PDA's), cellular telephones,aircraft, satellites, military vehicles, etc.

In this example, information handling system 1 comprises a dataprocessing system that includes a system bus 2 to couple the variouscomponents of the system. System bus 2 provides communications linksamong the various components of the information handling system 1 andcan be implemented as a single bus, as a combination of busses, or inany other suitable manner.

Multi-chip assembly 4 is coupled to the system bus 2. Multi-chipassembly 4 can include any circuit or combination of circuits. In oneembodiment, multi-chip assembly 4 includes a processor 6 which can be ofany type. As used herein, “processor” means any type of computationalcircuit, such as but not limited to a microprocessor, a microcontroller,a graphics processor, a digital signal processor (DSP), or any othertype of processor or processing circuit.

In one embodiment, a memory chip 7 is included in the multi-chipassembly 4. Those skilled in the art will recognize that a wide varietyof memory chips may be used in the multi-chip assembly 4. Acceptabletypes of memory chips include, but are not limited to Dynamic RandomAccess Memory (DRAMs) such as, SDRAMs, SLDRAMs, RDRAMs and other DRAMs.Static Random Access Memory (SRAMs), including VRAMs and EEPROMs, mayalso be used in the implementation of the present invention.

In one embodiment, additional logic chips 8 other than processor chipsare included in the multi-chip assembly 4. An example of a logic chip 8other than a processor includes an analog to digital converter. Othercircuits on logic chips 8 such as custom circuits, anapplication-specific integrated circuit (ASIC), etc. are also includedin one embodiment of the invention.

Information handling system 1 can also include an external memory 11,which in turn can include one or more memory elements suitable to theparticular application, such as one or more hard drives 12, and/or oneor more drives that handle removable media 13 such as floppy diskettes,compact disks (CDs), digital video disks (DVDs), and the like.

Information handling system 1 can also include a display device 9 suchas a monitor, additional peripheral components 10, such as speakers,etc. and a keyboard and/or controller 14, which can include a mouse,trackball, game controller, voice-recognition device, or any otherdevice that permits a system user to input information into and receiveinformation from the information handling system 1.

FIG. 2A shows a chip 200 in a stage of processing. The chip 200 includesa semiconductor substrate 210. In one embodiment, the semiconductorsubstrate 210 includes silicon. Other suitable semiconductor substrates210 include alternate semiconducting materials such as gallium arsenide,or composite substrate structures such as silicon-on-insulatorstructures.

A number of devices 220 are shown in schematic form, located on orwithin the substrate 210. One common device 220 includes a transistor,however the invention is not so limited. In one embodiment, devices 220further include devices such as diodes, capacitors, etc. A number ofthrough chip connection structures 230 is also shown. In one embodiment,the through chip connection structures 230 are formed using apreferential etching process such as anodic etching to create a throughchip channel with a high aspect ratio. In one embodiment, the channelsare insulated by oxidation and later filled with a conductor such as ametal fill material to conduct signals through the chip 200. In oneembodiment, the metal fill material includes aluminum metal.

In one example of anodic etching, a bottom surface of the substrate 210is coupled to voltage source by a positive electrode. Further, anegative electrode is coupled to a voltage source and is placed in abath of 6% aqueous solution of hydrofluoric acid (HF) on a surface ofthe substrate 210.

In operation, the anodic etch etches high aspect ratio holes throughsubstrate 210 at the location of etch pits. The voltage source is turnedon and provides a voltage across positive and negative electrodes.Etching current flows from the surface to the positive electrode. Thiscurrent forms the high aspect ratio holes through the substrate 210. Ananodic etching process is described in V. Lehmann, The Physics ofMacropore Formation in Low Doped n-Type Silicon, J. Electrochem. Soc.,Vol. 140, No. 10, pp. 2836-2843, Oct. 1993, which is incorporated hereinby reference.

In one embodiment, at least one through chip connection structure 230includes a coaxial conductor 232. In one embodiment, using methods suchas anodic etching, the connection structures 230 and/or coaxialconductors 232 have an aspect ratio in the range of approximately 100 to200. Conventionally, a semiconductor wafer used to form an integratedcircuit has a thickness in the range of approximately 500 to 1000microns. Thus, the through chip connection structures 230 and coaxialconductors 232 can be fabricated with a width that is in the range fromapproximately 2.5 microns up to as much as approximately 10 microns.Even smaller through chip connections can be made in chips which are tobe produced from wafers which are to be thinned after completion of thesemiconductor processing. In this case, the small holes are processed,including the appropriate filling, to a depth which equals the thicknessof the wafer after thinning. The wafers are thinned and connections arethen made to the exposed through connections.

Coaxial conductors 232 include a center conductor 238 that is surroundedby insulator, e.g., oxide, 236. Further, outer conductor 234 surroundsinsulator 236. Coaxial conductor 232 is shown in cross section in FIG.2A. Outer conductor 234 comprises, for example, a metal layer that isdeposited within a high aspect ratio via. Alternatively, outer conductor234 may comprise a portion of the substrate 210 that has been doped withimpurities to render it conductive.

In one embodiment, at least one through chip connection structure 230includes an optical waveguide. One embodiment of an optical waveguideincludes a reflective layer that is formed on inner surface of highaspect ratio holes. In one embodiment, the reflective layer includes ametallic mirror that is deposited with a self-limiting depositionprocess. This produces a reflective surface for an optical waveguidethat is substantially uniform. In one embodiment, the optical waveguidehas a center void that is essentially filled with air.

A two-step, selective process is used in one embodiment to deposittungsten as a portion of the reflective layer. This is a low-pressurechemical vapor deposition (LPCVD) process. In this process, atoms in thesubstrate 210, e.g., silicon, are replaced by tungsten atoms in areaction gas of WF₆. This is referred to as a “silicon reductionprocess.” The limiting thickness of this process is approximately 5 to10 nanometers. This thickness may not be sufficient for a reflectivelayer. Thus, a second reduction process can be used to complete thedeposition of tungsten. This second reduction step uses silane orpolysilane and is thus referred to as a “silane reduction.” The silanereduction process also uses WF₆. In one embodiment, when tungsten isused for the reflective layer, a thin film of a material with a higherreflectivity is deposited on the tungsten material. For example, analuminum film can be deposited at low temperature, e.g., in the rangefrom 180 E to 250 E Celsius.

In one embodiment, several varieties of through chip connectionstructures 230, such as examples decribed above, are used on a singlechip, or within a multi-chip assembly. In one embodiment, one type ofthrough chip connection structure 230 is selected and used throughouteach single chip 200, or a multi-chip assembly.

FIG. 2B shows a first insulator layer 240 attached to the chip 200 toisolate the number of devices 220 on a surface of the chip 200. Suitableinsulator layers 240 include, but are not limited to oxides, or polymerssuch as polyimide.

In FIG. 2C, a number of vias or contacts 250 are formed through thefirst insulator layer 240 to communicate with the number of devices 220and the through chip connection structures 230. In one embodiment, aphotolithographic process is used to pattern and remove selectedportions of the first insulator layer 240 to form the vias or contacts250.

FIG. 2D shows a lateral connection structure 260. The lateral connectionstructure 260 is utilized for interconnecting selected devices 220and/or connecting selected through chip connection structures 230. Inone embodiment, the lateral connection structure 260 includes ametalized layer such as a metal trace line. In larger scale embodiments,a large network of lateral connection structures 260 such as metalizedlines are used to connect devices on the chip 200 and form integratedcircuits. In one embodiment, at least one end 262 of a lateralconnection structure 260 is located adjacent to an edge 202 of the chip200.

FIG. 2E shows a second insulator layer 270 attached to the chip 200 toisolate the lateral connection structure or structures 260. In oneembodiment, the second insulator layer 270 includes a polymer layer. Inone embodiment, a suitable polymer includes a polyimide. Some polyimidesare able to withstand exposure to temperatures in a range fromapproximately 250-620° C. Endurance of the second insulator layer 270 athigh temperatures is important because in some processes, the chip 200is exposed to high processing temperatures before final manufacturing iscomplete. Suitable polyimides that posess a variety of physicalproperties include, but are not limited to, Type I, Type III, and Type Vpolyimides.

Other suitable polymeric materials include, for example, parylene,polynorbornenes and fluorinated polymers. Parylene-N has a melting pointof 420° C., a tensile modulus of 2.4 GPa, and a yield strength of 42MPa. One class of polynorbornene includes Avatrel™ polymer availablefrom BF Goodrich, Cleveland, Ohio, USA. In one embodiment, silane isadded to polynorbornenes to further lower the dielectric constant.

In addition to polymeric matrix materials, aerogels, such as silicaaerogel, may be utilized to provide porous insulating material of thevarious embodiments. Aerogels are generally a gel material that forms aporous matrix when liquid or solvent in the gel is replaced by air oranother gaseous component. Aerogels generally experience only minimalvolumetric change upon such curing.

For embodiments that include a polymeric second insulator layer 270, thepolymeric material is generally cured, or crosslinked, followingformation. For one embodiment, curing can include an optional lowtemperature bake to drive off most of the solvents that may be presentin the polymer prior to crosslinking. Other conventional polymers can becured by exposing them to visible or ultraviolet light. Still otherconventional polymers can be cured by adding curing (e.g., crosslinking)agents to the polymer.

FIG. 2F shows a number of connection structures 280 formed through thesecond insulator layer 270 to complete a signal pathway for the throughchip connection structures 230. As shown in FIG. 2F, the chip 200 nowcontains at least two types of connection structures. One type includesthe through chip connection structures 230, which are designed totransmit signals substantially along direction 272. Another typeincludes the lateral connection structures 260, which are designed totransmit signals substantially along direction 262.

In one embodiment, selected through chip connection structures 230 areisolated from lateral connection structures 260, and only transmitsignals through the chip 200. In one embodiment, selected through chipconnection structures 230 are coupled to selected lateral connectionstructures 260 to communicate signals both through the chip 200 andlaterally across the chip 200. One of ordinary skill in the art, havingthe benefit of the present disclosure will appreciate that a number ofinterconnection designs and combinations incorporating both through chipconnection structures 230 and lateral connection structures 260 arepossible depending on a given integrated circuit design and multi-chipassembly design.

FIG. 2G shows the chip 200 mounted to a carrier 204. In one embodiment,the carrier 204 is used to facilitate thinning of the chip 200. Abeginning thickness 212 of the chip 200 is indicated. In one embodiment,the carrier includes a sacrificial silicon wafer. Various methods arepossible for attaching the chip 200 to the surface of the carrier 204.In one embodiment, the chip 200 is attached to the carrier using a watersoluble epoxy, which facilitates removal of the chip 200 at a laterstage of manufacturing. The chip 200 is shown mounted with a backsidefacing upwards and exposed for a thinning operation.

FIG. 2H shows the chip 200 after a thinning process. The chip 200 hasbeen thinned to a thickness as indicated by 214. Any of a number ofacceptable thinning processes can be used. In one embodiment, the chip200 is thinned using chemical mechanical polishing (CMP) techniques. Inone embodiment, a deep implant of p+ carriers is implanted sufficient toa depth within the substrate 210 that is deeper than a maximum depth ofthe number of devices 220. In one embodiment, the through chipconnection structures 230 are formed to a depth that is deeper than thedepth of the p+ deep implant. The thinning process can then be set tostop at the depth from the backside of the chip 200 where the p+ layeris contacted. Using variations of this embodiment, the through chipconnection structures 230 are exposed during the thinning process. Otherembodiments are included that do not use the p+ deep implant and chipthinning technique.

In one embodiment, the second insulator layer 270 includes cells ofgaseous components. In one embodiment, an average cell size is less than0.1 microns. In one embodiment, as shown in FIG. 2I, a polymer secondinsulator layer 270 is foamed to form cells of gaseous components. FIG.2H shows the second insulator layer 270 with a thickness 274. In oneembodiment, the thickness 274 is approximately 0.7 microns thick. FIG.2I shows a second thickness 276 of the second insulator layer 270 aftera foaming process. The chip 200 in FIG. 2I is shown without a carrier204. In one embodiment, the second thickness 276 is approximately 2.1microns thick.

In one embodiment, the foaming process is performed after the chip isthinned, as described above, although the invention is not so limited.The cells function to further reduce the dielectric constant. Anincrease in thickness of the second insulator layer 270 also reducesunwanted capacitive effects. Depending on the process used to foam thepolymer in the second insulator layer 270, the cells may include air, orother gasses such as carbon dioxide.

In one embodiment, a supercritical fluid is utilized to convert at leasta portion of the polymeric material, into a foamed polymeric material.Such use of supercritical fluids facilitates formation of sub-microncells in the foamed polymeric material. A gas is determined to be in asupercritical state (and is referred to as a supercritical fluid) whenit is subjected to a combination of pressure and temperature above itscritical point, such that its density approaches that of a liquid (i.e.,the liquid and gas states are indistinguishable). A wide variety ofcompounds and elements can be converted to the supercritical state inorder to be used to form the second insulator layer 270.

Suitable supercritical fluids include, but are not limited to: ammonia(NH₃), an amine (NR₃), an alcohol (ROH), water (H₂O), carbon dioxide(CO₂), nitrous oxide (N₂O), a noble gas (e.g., He, Ne, Ar), a hydrogenhalide (e.g., hydrofluoric acid (HF), hydrochloric acid (HCl),hydrobromic acid (HBr)), boron trichloride (BCl₃), chlorine (Cl₂),fluorine (F₂), oxygen (O₂) nitrogen (N₂), a hydrocarbon (e.g., dimethylcarbonate (CO(OCH₃)₂), methane (CH₄), ethane (C₂H₆), propane (C₃H₈),ethylene (C₂H₄), etc.), a fluorocarbon (e.g., CF₄, C₂F₄, CH₃F, etc.),hexafluoroacetylacetone (C₅H₂F₆O₂), and combinations thereof.

Although these and other fluids may be used, it is preferable to have afluid with a low critical pressure, preferably below about 100atmospheres, and a low critical temperature of at or near roomtemperature. Further, it is preferred that the fluids be nontoxic andnonflammable. Likewise, the fluids should not degrade the properties ofthe polymeric material. For one embodiment, supercritical fluid CO₂ isutilized, due to the relatively inert nature of CO₂ with respect to mostpolymeric materials as well as other materials utilized in integratedcircuit fabrication.

A selected polymer in one embodiment of a second insulator layer 270 isexposed to the supercritical fluid for a sufficient time period to foamat least a portion of the polymeric material. In one embodiment, thechip 200 is placed in a processing chamber, and the temperature andpressure of the processing chamber are elevated above the temperatureand pressure needed for creating and maintaining the particularsupercritical fluid. After the second insulator layer 270 is exposed tothe supercritical fluid for a sufficient period of time to saturate thepolymeric material with supercritical fluid, the flow of supercriticalfluid is stopped and the processing chamber is depressurized. Upondepressurization, the foaming of the polymeric material occurs as thesupercritical state of the fluid is no longer maintained, and cells areformed in the polymeric material.

One of ordinary skill in the art, having the benefit of the presentdisclosure will recognize that other foaming techniques may be used inplace of or in combination with that described herein in accordance withthe present invention. For example, foams may also be formed by use ofblock co-polymers.

In one embodiment, polymer materials such as embodiments of the secondinsulator layer 270, include hydrophilic polymers. The use of ahydrophilic polymer is advantageous because moisture is attracted awayfrom metal or semiconductor devices in the chip 200 where water couldcause corrosion damage. In one embodiment, in contrast to choosing ahydrophilic polymer, a hydrophilic treatment is added to whateverpolymer or insulator layer is selected. In one embodiment, thehydrophilic treatment includes introduction of methane radicals to asurface of the insulator layer. In one embodiment, the methane radicalsare created using a high frequency electric field. By utilizing anadditional treatment process, the insulator layer can be selected basedon other material properties such as dielectric constant, and theadditional desirable property of a hydrophilic nature can be added tothe chosen material.

FIG. 2J shows the chip 200 from another angle to further illustratepossible locations of structures in the chip 200 as described above. Thenumber of devices 220 are shown, with the lateral connection structure260 coupling to the illustrated devices 220. The lateral connectionstructure 260 includes an end 262 that is adjacent to a chip edge asdescribed above. The number of through chip connection structures 230are shown in various locations on the chip 200. As described above,selected through chip connection structures 230 such as individualstructure 231 are coupled to other circuitry such as the lateralconnection structure 260. As an example a selected through chipconnection structure 230 is shown as a coaxial structure 232. Asdescribed above, coaxial structures 232 are one possible embodiment ofthrough chip connection structures 230.

In one embodiment, selected chip connection structures, includingthrough chip connection structures 230 and lateral connection structure260 are coupled to terminal metals to facilitate later connection toother chips. In one embodiment, terminal metals include ZrNiCuAu padsand solder applied to aluminum contact metal.

FIG. 3 illustrates one example of a multi-chip assembly 300 usingembodiments of chips as described in embodiments above. A number ofchips 310 are shown coupled together to form an assembly. In FIG. 3, theassembly 300 includes a cube like assembly, although the invention isnot so limited. Other geometries of multi-chip assemblies are possible,such as rectangular assemblies, or other complex geometries that utilizethrough chip connection structures and lateral connection structures arewithin the scope of the invention.

A number of chip edge connections 320 are illustrated. In oneembodiment, the chip edge connections 320 are formed by removingmaterial from the edges of chips 310 to expose lateral connectionstructures as described in embodiments above. In one embodiment,removing material includes etching back the edges of the chips 310. Anumber of chip edge interconnects 330 are also shown coupling selectedchip edge connections 320. In one embodiment, the chip edgeinterconnects 330 include metal trace lines.

In one embodiment, the number of chips 310 include both memory chipssuch as DRAM, SRAM, or flash chips. In one embodiment, the number ofchips 310 also includes at least one logic chip. As discussed above,logic chips include processor chips, or other specialized logic chipssuch as analog to digital converter chips. In one embodiment, aprocessor chip is included as a logic chip, and is located on anexternal surface of the multi-chip assembly 300. Location on an externalsurface is advantageous because cooling is enhanced on external surfacesof the multi-chip assembly 300. Logic chips such as processor chips tendto generate large amounts of heat compared to memory chips, thereforelocation of logic chips on external surfaces is desired. In someembodiments, multiple logic or processor chips are included, andexternal surfaces may not be available for all logic chips. Inembodiments such as these, logic chips may be located internal to themulti-chip assembly 300.

Although not visible in FIG. 3, the multi-chip assembly 300 includeschips with both lateral connection structures and through chipconnection structures as described in embodiments above. The use of bothlateral connection structures and through chip connection structures isadvantageous because more pathways are available for the chips 310 inthe multi-chip assembly 300 to communicate with each other. If only edgeconnections were used, the number of connections would be limited to thespace on the edge of the chips. Using embodiments described above, amulti-chip assembly 300 is able to also utilize through chip connectionstructures to increase the number of connections between chips.

Further, the distance of a connection between selected regions from onechip to another is significantly reduced using embodiments describedabove. In many instances, a connection pathway directly through themiddle of a chip using a through chip connection is significantlyshorter than connecting out to an edge of one chip, then back intoanother chip from that chip edge. Shorter connection pathways lead toincreased speed and performance of multi-chip assemblies 300.

FIG. 4 shows an embodiment of a multi-chip assembly 400. A number ofchips 410 are shown coupled together to form the assembly 400. In theFigure, the multi-chip assembly 400 is shown attached to a surface 402such as a motherboard. A number of chip edge connections 420 areillustrated. In one embodiment, the chip edge connections 420 are formedby removing material from the edges of chips 410 to expose lateralconnection structures as described in embodiments above. In oneembodiment, removing material includes etching back the edges of thechips 410. A number of chip edge interconnects 430 are also showncoupling selected chip edge connections 420. In one embodiment, the chipedge interconnects 430 include metal trace lines.

Similar to embodiments discussed above, in one embodiment at least onelogic chip, such as a processor, is included in the number of chips 410.In FIG. 4, a logic chip is shown coupled to the top of the multi-chipassembly 400. A second number of chip edge interconnects 440 is showncoupling to this logic chip. The second number of chip edgeinterconnects 440 illustrate one possible connection method to connectchips that are orthogonal to each other. Although the figure illustratesorthogonal chips, other angles apart from 90 degrees are possiblebetween chips of the multi-chip assembly 400.

Also illustrated in FIG. 4 is a corner connection structure 450. In oneembodiment, the corner connection structure includes a first conductingpillar 452, a second conducting pillar 454 and a solder ball 456. Otherembodiments of corner connection structures are also included within thescope of the invention. Acceptable devices and methods are described incommonly assigned U.S. Pat. No. 6,552,424 which is incorporated hereinby reference in its entirety.

CONCLUSION

Using devices and methods as described above, a multi-chip assembly isprovided that uses both lateral connection structures and through chipconnection structures. One advantage of this design includes anincreased number of possible connections. Another advantage of thisdesign includes shorter distances for interconnection pathways, whichimproves device performance and speed. Numerous other advantages areprovided by embodiments described above, including but not limited to:decreased capacitive coupling from improved isolation structures andmaterials; decreased corrosion probability due to hydrophilic materials;improved cooling due to locations of logic chips; reduced assembly sizedue to thinning of chips; etc.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement which is calculated to achieve the same purpose maybe substituted for the specific embodiment shown. This application isintended to cover any adaptations or variations of the presentinvention. It is to be understood that the above description is intendedto be illustrative, and not restrictive. Combinations of the aboveembodiments, and other embodiments will be apparent to those of skill inthe art upon reviewing the above description. The scope of the inventionincludes any other applications in which the above structures andfabrication methods are used. The scope of the invention should bedetermined with reference to the appended claims, along with the fullscope of equivalents to which such claims are entitled.

What is claimed is:
 1. A multi-chip assembly, comprising: a stack ofchips, including a number of memory chips; a number of edge connectorscoupled to multiple chips in the stack of chips; and a number of throughchip connectors passing through a thickness of multiple chips in thestack of chips.
 2. The multi-chip assembly of claim 1, wherein thenumber of edge connectors includes metal traces.
 3. The multi-chipassembly of claim 1, wherein the number of through chip connectorsincludes coaxial conductors.
 4. The multi-chip assembly of claim 1,wherein the number of through chip connectors includes opticalwaveguides.
 5. The multi-chip assembly of claim 1, further including alogic chip coupled to the stack of chips.
 6. The multi-chip assembly ofclaim 1, wherein the logic chip is stacked with the stack of chips. 7.The multi-chip assembly of claim 1, wherein the logic chip is stacked onan end of the stack of chips.
 8. A multi-chip assembly, comprising: astack of chips, including a number of memory chips; a number of edgeconnectors coupled to multiple chips in the stack of chips; a number ofthrough chip connectors passing through a thickness of multiple chips inthe stack of chips; and a logic chip coupled orthogonally to the stackof chips.
 9. The multi-chip assembly of claim 8, wherein the logic chipis coupled to the stack of chips using at least one corner connection atan inside corner between an edge of the logic chip and an edge of one ofthe memory chips in the stack of chips.
 10. The multi-chip assembly ofclaim 8, wherein the number of edge connectors includes metal traces.11. The multi-chip assembly of claim 8, wherein the number of throughchip connectors includes coaxial conductors.
 12. The multi-chip assemblyof claim 8, wherein the number of through chip connectors includesoptical waveguides.
 13. The multi-chip assembly of claim 8, wherein thestack of chips includes at least one processor chip.
 14. A multi-chipassembly, comprising: a stack of chips, including a number of memorychips; a number of edge connectors coupled to multiple chips in thestack of chips; a number of through chip connectors passing through athickness of multiple chips in the stack of chips; and a polymerinsulation layers between each chip in the stack of chips.
 15. Themulti-chip assembly of claim 14, further including a logic chip stackedorthogonally to the stack of chips.
 16. The multi-chip assembly of claim15, wherein the logic chip is coupled to the stack of chips using atleast one corner connection at an inside corner between an edge of thelogic chip and an edge of one of the memory chips in the stack of chips.17. The multi-chip assembly of claim 14, wherein the polymer insulationlayers include foamed polymer insulation layers.
 18. The multi-chipassembly of claim 17, wherein the foamed polymer insulation layers eachinclude a polynorbornene insulation layer.
 19. The multi-chip assemblyof claim 17, wherein the foamed polymer insulation layers each includehydrophilic foamed polymer.
 20. The multi-chip assembly of claim 17,wherein the hydrophilic foamed polymer insulation layers each includemethane radicals.